Win Semiconductors Corp. 穩懋半導體股份有限公司

WIN Semiconductors Corp.founded in October 1999, was the first pure-play 6-inch GaAs foundry in the world, has established two advanced GaAs wafer fabs in recognition of the growing demand for low cost manufacturing of high speed and high quality GaAs MMIC's (monolithic microwave ICs) and RFIC's (radio frequency ICs). WIN provides dedicated foundry services to design houses as well as IDM partners. WIN supplies HBT and pHEMT MMIC fabrication services to worldwide IC manufacturers, using state-of-the-art GaAs process technology. WIN provides fast and low cost foundry services in broad range of applications from 5MHz to 130 GHz. The technologies including 1μm HBT, 2μm HBT, 0.xn--5m-99b pHEMT Switch, 0.xn--5m-99b power pHEMT, 0.xn--25m-yyc power pHEMT, 0.xn--25m-yyc E/D pHEMT, 0.xn--15m-yyc LNA pHEMT, 0.xn--15m-yyc power pHEMT, 0.xn--1m-99b power pHEMT and BiFET pHEMT are in mass-production now. 1μm HBT is ideal for fiber communication systems. 2μm HBT and 0.xn--5m-99b pHEMT Switch are ideal for handsets and WLAN applications. 0.xn--1m-99b, 0.xn--15m-yyc, and 0.xn--25m-yyc pHEMT technologies are ideals for applications from discrete low noise/power FETs, SATOM, VSAT, base station, automotive radar, and 40Gb/s fiber optic MMICs. 0.xn--5m-99b pHEMT is ideal for SATOM, GPS, Cable TV tuner, Electronic toll collection and WLAN.

Newmarket, New Hampshire
Founded in 1999
501-1,000 employees

WIN Semiconductors Corp.founded in October 1999, was the first pure-play 6-inch GaAs foundry in the world, has established two advanced GaAs wafer fabs in recognition of the growing demand for low cost manufacturing of high speed and high quality GaAs MMIC's (monolithic microwave ICs) and RFIC's (radio frequency ICs). WIN provides dedicated foundry services to design houses as well as IDM partners. WIN supplies HBT and pHEMT MMIC fabrication services to worldwide IC manufacturers, using state-of-the-art GaAs process technology. WIN provides fast and low cost foundry services in broad range of applications from 5MHz to 130 GHz. The technologies including 1μm HBT, 2μm HBT, 0.xn--5m-99b pHEMT Switch, 0.xn--5m-99b power pHEMT, 0.xn--25m-yyc power pHEMT, 0.xn--25m-yyc E/D pHEMT, 0.xn--15m-yyc LNA pHEMT, 0.xn--15m-yyc power pHEMT, 0.xn--1m-99b power pHEMT and BiFET pHEMT are in mass-production now. 1μm HBT is ideal for fiber communication systems. 2μm HBT and 0.xn--5m-99b pHEMT Switch are ideal for handsets and WLAN applications. 0.xn--1m-99b, 0.xn--15m-yyc, and 0.xn--25m-yyc pHEMT technologies are ideals for applications from discrete low noise/power FETs, SATOM, VSAT, base station, automotive radar, and 40Gb/s fiber optic MMICs. 0.xn--5m-99b pHEMT is ideal for SATOM, GPS, Cable TV tuner, Electronic toll collection and WLAN.

Company Information

Industry
Company Type
Public Company
Founded
1999
Employee Range
501-1,000
Revenue Range
Not available

Location

Address
69 Technology 7th Road, Hwaya Technology Park, Tao Yuan Hsien, Taiwan taoyuan
City
Newmarket
Region
New Hampshire
Postal Code
Country
United States

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